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| (R) STY60NA20 N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 s s V DSS 200 V R DS(on) < 0.032 ID 60 A s s s s s s TYPICAL RDS(on) = 0.030 EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TM 1 2 3 Max247TM DESCRIPTION T he Max247 package is a new high volume power package exibiting the same footprint as the industr y standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as T O-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction T emperature o o Value 200 200 30 60 40 240 300 2.4 -65 to 150 150 Uni t V V V A A A W W/ C o o o C C (*) Pulse width limited by safe operating area August 1998 1/4 STY60NA20 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max T yp 0.42 40 0.05 o o C/W C/W AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = I AR , V DD = 50 V) Max Valu e 60 3000 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A VGS = 0 Min. 200 1 10 100 Typ . Max. Un it V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V T c = 100 C o ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source O n Resistance On State Drain Current V GS = 10 V Test Cond ition s ID = 250 A ID = 30A 60 Min. 2 Typ . 3 0.03 Max. 4 0.032 Un it V A V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 30 A VGS = 0 Min. 20 6000 1400 500 8000 1900 700 Typ . Max. Un it S pF pF pF 2/4 STY60NA20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 100 V R G = 4.7 V DD = 160 V I D = 60 A ID = 30 A VGS = 10 V VGS = 10 V Min. Typ . 40 50 285 40 150 Max. 55 70 370 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over T ime Test Cond ition s V DD = 160 V R G = 4.7 I D = 60 A V GS = 10 V Min. Typ . 70 40 110 Max. 100 55 150 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A I SD = 60 A V DD = 50 V V GS = 0 di/dt = 100 A/s o T j = 150 C 480 7.5 30 Test Cond ition s Min. Typ . Max. 60 240 1.5 Un it A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/4 STY60NA20 Max247 MECHANICAL DATA mm MIN. A A1 b b1 b2 c D e E L L1 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 TYP. MAX. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 MIN. inch TYP. MAX. DIM. P025Q 4/4 STY60NA20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 5/4 |
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